8ETL06FPPBF Vishay, 8ETL06FPPBF Datasheet - Page 5

• Manufacturer Part Number: 8ETL06FPPBF
• Description: DIODE HYPERFAST 600V 8A TO220FP
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of 8ETL06FPPBF

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.05V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack Fused Center, ITO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.05 V
• Recovery Time: 250 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 175 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 1.05V
• Reverse Recovery Time Trr Max: 170ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *8ETL06FPPBF; VS-8ETL06FPPBF; VS-8ETL06FPPBF; VS8ETL06FPPBF; VS8ETL06FPPBF

Document Number: 94028
Revision: 24-Nov-08
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100
50
0
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
I
I
F
F
= 16 A
= 8 A
Discontinuous Mode PFC, 8 A FRED Pt
dI
(1) dI
(2) I
(3) t
0
Ultralow V
F
/dt (A/µs)
V
T
T
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
through zero crossing
J
J
RRM
rr
R
I
F
F
= 125 °C
= 25 °C
- reverse recovery time measured
= 390 V
/dt - rate of change of current
- peak reverse recovery current
F
For technical questions, contact: [e-mail]
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
RRM
F
Hyperfast Rectifier for
and 0.50 I
(1)
adjust
dI
F
/dt
dI
1000
F
F
/dt
RRM
/dt
L = 70 µH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
b
/dt - peak rate of change of
8ETL06PbF, 8ETL06FPPbF
RRM
5000
4500
4000
3500
3000
2500
2000
1500
1000
TM
500
dI
0.5 I
Q
(rec)M
100
rr
Q
=
RRM
b
Vishay High Power Products
rr
/dt
Fig. 10 - Typical Stored Charge vs. dI
portion of t
I
I
t
F
F
(4)
rr
= 16 A
= 8 A
x I
(5)
2
RRM
rr
dI
rr
F
/dt (A/µs)
V
T
T
R
J
J
= 125 °C
= 25 °C
= 390 V
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F
/dt
1000
5