BAT54HT1G Fairchild Semiconductor, BAT54HT1G Datasheet

BAT54HT1G

Manufacturer Part Number

BAT54HT1G

Description

DIODE SCHOTTKY 30V 200MA SOT-23

Manufacturer

Fairchild Semiconductor

Datasheets

1.BAT54C.pdf (3 pages)

2.BAT54HT1G.pdf (4 pages)

Specifications of BAT54HT1G

Voltage - Forward (vf) (max) @ If

800mV @ 100mA

Voltage - Dc Reverse (vr) (max)

30V

Current - Average Rectified (io)

200mA

Current - Reverse Leakage @ Vr

2µA @ 25V

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

5ns

Capacitance @ Vr, F

10pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

30 V

Forward Voltage Drop

0.8 V @ 0.1 A

Recovery Time

5 ns

Forward Continuous Current

0.2 A

Max Surge Current

0.6 A

Reverse Current Ir

2 uA

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Current page: 1 of 4
Download datasheet (167Kb)

BAT54HT1G Rev. A1

BAT54HT1G

Small Signal Diode

Absolute Maximum Ratings

* These ratings are limiting values above which the serviceability of the diode may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle

Thermal Characteristics

Electrical Characteristics

operations.

Symbol

F(AV)

FSM

RRM

STG

θJA

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

Storage Temperature Range

Operating Junction Temperature

Power Dissipation

Thermal Resistance, Junction to Ambient

Breakdown Voltage

Forward Voltage

Reverse Leakage

Total Capacitance

Reverse Recovery Time I

SOD-323

Parameter

=25°C unless otherwise noted

* T

= 25°C unless otherwise noted

= 0.1mA

= 1.0mA

= 10mA

= 30mA

= 100mA

= I

= 10μA

= 100Ω

= 25V

= 1V, f = 1.0MHz

Test Conditions

= 10mA, I

= 1.0mA,

Min.

-65 to +150

-55 to +150

Value

Connection Diagram

200

600

200

600

Max.

240

320

400

500

0.8

2.0

5.0

www.fairchildsemi.com

March 2010

Units

°C/W

μA

°C

Related parts for BAT54HT1G

BAT54HT1G Summary of contents

Page 1

... Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time I rr © 2010 Fairchild Semiconductor Corporation BAT54HT1G Rev 25°C unless otherwise noted A Parameter Parameter T =25°C unless otherwise noted A Test Conditions I = 10μ 0.1mA ...

Page 2

... C 0.1 o 125 C 0.01 o 100 1E 1E-5 1E-6 0.0 0.2 0.4 Forward Voltage Drop Reverse Voltage, V © 2010 Fairchild Semiconductor Corporation BAT54HT1G Rev. A1 1E-3 1E-4 1E-5 1E-6 1E-7 1E-8 0.6 0 150 C o 125 C o 100 Reverse Voltage, V [V] R www.fairchildsemi.com ...

Page 3

Page 4

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET AccuPower Auto-SPM Global Power Resource Build it Now Green FPS CorePLUS Green FPS CorePOWER Gmax ...

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