S1PD-E3/85A Vishay, S1PD-E3/85A Datasheet - Page 3

• Manufacturer Part Number: S1PD-E3/85A
• Description: DIODE GPP 1A 200V SMP DO-220AA
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of S1PD-E3/85A

• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 1800 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

Document Number: 88917
Revision: 07-Jul-09
Figure 3. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
30
25
20
15
10
0.1
0.1
10
10
Figure 5. Typical Reverse Leakage Characteristics
5
0
1
1
0.4
10
1
Percent of Rated Peak Reverse Voltage (%)
20
0.6
Instantaneous Forward Voltage (V)
T
J
30
= 150 °C
Number of Cycles at 50 Hz
0.8
T
J
40
= 125 °C
1.0
T
J
T
= 150 °C
J
50
= 25 °C
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10
1.2
T
J
T
60
= 125 °C
J
= 25 °C
1.4
70
1.6
80
1.8
90
100
100
2.0
1000
100
100
10
10
1
1
0.01
0.1
Figure 7. Typical Transient Thermal Impedance
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Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
S1PB thru S1PM
1
10
10
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100
100
3