RS1A-E3/61T Vishay, RS1A-E3/61T Datasheet - Page 3

• Manufacturer Part Number: RS1A-E3/61T
• Description: DIODE SW GPP FAST 1A 50V SMA
• Manufacturer: Vishay

Specifications of RS1A-E3/61T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.3V @ 1A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Switching Diodes
• Peak Reverse Voltage: 50 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Recovery Time: 150 ns
• Forward Voltage Drop: 1.3 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.3V
• Reverse Recovery Time Trr Max: 150ns
• Forward Surge Current Ifsm Max: 30A
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 50V
• Avg. Forward Curr (max): 1A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 30A
• Forward Voltage: 1.3V
• Operating Temp Range: -55C to 150C
• Package Type: SMA
• Rev Recov Time: 150ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RS1A-E3/5AT

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88707
Revision: 11-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
T
40
= 125 °C
J
1.0
= 125 °C
0.065 (1.65)
0.049 (1.25)
0.030 (0.76)
0.060 (1.52)
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0.078 (1.98)
0.090 (2.29)
T
1.2
J
60
= 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
1.4
= 25 °C
T
J
80
= 25 °C
DO-214AC (SMA)
1.6
0.194 (4.93)
0.157 (3.99)
0.208 (5.28)
0.177 (4.50)
Cathode Band
0.008 (0.203)
100
1.8
0 (0)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
(1.68 MIN.)
0.066 MIN.
0.060 MIN.
(1.52 MIN.)
100
100
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
Mounted on 0.2 x 0.2" (5 x 5 mm)
Copper Pad Area
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
RS1J to RS1K
(5.28) REF
0.208
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
0.074 MAX.
(1.88 MAX.)
RS1A thru RS1K
10
RS1A to RS1G
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
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100
10
3