RS1K-E3/61T Vishay, RS1K-E3/61T Datasheet - Page 3
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RS1K-E3/61T
Manufacturer Part Number
RS1K-E3/61T
Description
DIODE SW GPP FAST 1A 800V SMA
Manufacturer
Vishay
Datasheet
1.RS1A-E35AT.pdf
(4 pages)
Specifications of RS1K-E3/61T
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.3V @ 1A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 800V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
500ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Switching Diodes
Peak Reverse Voltage
800 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Recovery Time
500 ns
Forward Voltage Drop
1.3 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
800V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
500ns
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RS1K-E3/5AT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RS1K-E3/61T
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
RS1K-E3/61T
Manufacturer:
FUJI
Quantity:
360
Part Number:
RS1K-E3/61T
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88707
Revision: 11-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
0.4
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
T
40
= 125 °C
J
1.0
= 125 °C
0.065 (1.65)
0.049 (1.25)
0.030 (0.76)
0.060 (1.52)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
0.078 (1.98)
0.090 (2.29)
T
1.2
J
60
= 100 °C
Pulse Width = 300 µs
1 % Duty Cycle
T
J
1.4
= 25 °C
T
J
80
= 25 °C
DO-214AC (SMA)
1.6
0.194 (4.93)
0.157 (3.99)
0.208 (5.28)
0.177 (4.50)
Cathode Band
0.008 (0.203)
100
1.8
0 (0)
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
(1.68 MIN.)
0.066 MIN.
0.060 MIN.
(1.52 MIN.)
100
100
10
10
1
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Vishay General Semiconductor
Mounted on 0.2 x 0.2" (5 x 5 mm)
Copper Pad Area
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
RS1J to RS1K
(5.28) REF
0.208
t - Pulse Duration (s)
Reverse Voltage (V)
0.1
0.074 MAX.
(1.88 MAX.)
RS1A thru RS1K
10
RS1A to RS1G
1
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
www.vishay.com
100
10
3