B130-E3/61T Vishay, B130-E3/61T Datasheet - Page 3
![DIODE SCHOTTKY 1A 30V SMA](/photos/5/29/52911/do-214ac__sma__pkg_sml.jpg)
B130-E3/61T
Manufacturer Part Number
B130-E3/61T
Description
DIODE SCHOTTKY 1A 30V SMA
Manufacturer
Vishay
Datasheet
1.B120-E35AT.pdf
(4 pages)
Specifications of B130-E3/61T
Voltage - Forward (vf) (max) @ If
520mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
200µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Rectifiers
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
30 A
Configuration
Single
Forward Voltage Drop
0.52 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
B130-E3/5AT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
B130-E3/61T
Manufacturer:
VISHAY
Quantity:
130 000
Part Number:
B130-E3/61T
Manufacturer:
VISHAY/威世
Quantity:
20 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88946
Revision: 13-Oct-09
0.01
0.01
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Instantaneous Forward Characteristics
10
0.1
10
0.1
1
1
0
0
T
J
T
J
= 125 °C
0.2
0.2
= 125 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
0.065 (1.65)
0.049 (1.25)
T
0.060 (1.52)
0.030 (0.76)
J
T
0.090 (2.29)
0.078 (1.98)
0.4
J
0.4
= 150 °C
= 150 °C
T
J
0.6
0.6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 25 °C
For technical questions within your region, please contact one of the following:
T
J
= 25 °C
0.8
0.8
DO-214AC (SMA)
B120 thru B140
B150 and B160
1.0
1.0
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
Cathode Band
1.2
1.2
0.008 (0.203)
0 (0)
1.4
1.4
New Product
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
100 000
10 000
1000
1000
100
100
0.066 (1.68)
0.1
10
10
0.060 (1.52)
1
MIN.
Fig. 7 - Typical Reverse Leakage Characteristics
0.1
10
DiodesEurope@vishay.com
MIN.
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Mounting Pad Layout
20
Fig. 8 - Typical Junction Capacitance
B120 thru B140
B150 and B160
B120 thru B140
B150 and B160
30
Reverse Voltage (V)
40
1
0.208 (5.28)
REF.
T
50
J
= 125 °C
T
J
B120 thru B160
60
= 150 °C
0.074 (1.88)
10
70
MAX.
T
V
J
sig
f = 1.0 MHz
= 25 °C
T
80
J
= 50 mV
= 25 °C
90
www.vishay.com
p-p
100
100
3