EGP10C-E3/54 Vishay, EGP10C-E3/54 Datasheet - Page 3
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EGP10C-E3/54
Manufacturer Part Number
EGP10C-E3/54
Description
DIODE 1A 150V 50NS SMC
Manufacturer
Vishay
Datasheet
1.EGP10A-E354.pdf
(4 pages)
Specifications of EGP10C-E3/54
Voltage - Forward (vf) (max) @ If
950mV @ 1A
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
0.95 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Note
• Lead diameter is
Document Number: 88582
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
10
0.1
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
Percent of Rated Peak Reverse Voltage (%)
0.4
Pulse Width = 300 μs
Instantaneous Forward Voltage (V)
1 % Duty Cycle
20
0.026 (0.66)
0.023 (0.58)
T
J
0.6
= 150 °C
0.8
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
for suffix “E” part numbers
For technical questions within your region, please contact one of the following:
1.0
T
T
T
EGP10A thru EGP10D
EGP10F and EGP10G
J
J
J
60
= 150 °C
= 100 °C
= 25 °C
1.2
T
J
= 25 °C
1.4
80
This datasheet is subject to change without notice.
1.6
100
1.8
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
DIA.
DO-204AL (DO-41)
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
0.1
70
60
50
40
30
20
10
10
0
1
0.01
0.1
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
EGP10A thru EGP10D
EGP10F and EGP10G
EGP10A thru EGP10G
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
www.vishay.com/doc?91000
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
www.vishay.com
p-p
100
100
3