BYS10-25-E3/TR Vishay, BYS10-25-E3/TR Datasheet - Page 2
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BYS10-25-E3/TR
Manufacturer Part Number
BYS10-25-E3/TR
Description
DIODE SCHOTTKY 1A 25V DO-214AC
Manufacturer
Vishay
Specifications of BYS10-25-E3/TR
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
500mV @ 1A
Voltage - Dc Reverse (vr) (max)
25V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
500µA @ 25V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Schottky Diodes
Peak Reverse Voltage
25 V
Forward Continuous Current
1.5 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.5 V at 1 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
25V
Forward Current If(av)
1.5A
Forward Voltage Vf Max
500mV
Forward Surge Current Ifsm Max
40A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BYS10-25-E3/TR3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYS10-25-E3/TR
Manufacturer:
TDK
Quantity:
460 000
Company:
Part Number:
BYS10-25-E3/TR
Manufacturer:
VISHAY
Quantity:
130 000
Part Number:
BYS10-25-E3/TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
BYS10-25 thru BYS10-45
Vishay General Semiconductor
Note
(1)
Notes
(1)
(2)
(3)
Note
(1)
RATINGS AND CHARACTERISTICS CURVES
(T
www.vishay.com
2
BYS10-45HE3/TR3
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward voltage
Maximum DC reverse current
THERMAL CHARACTERISTICS (T
PARAMETER
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
ORDERING INFORMATION (Example)
PREFERRED P/N
BYS10-45-E3/TR
BYS10-45-E3/TR3
BYS10-45HE3/TR
A
Pulse test: 300 μs pulse width, 1 % duty cycle
Mounted on epoxy-glass hard tissue
Mounted on epoxy-glass hard tissue, 50 mm
Mounted on Al-oxide-ceramic (Al
Automotive grade
= 25 °C unless otherwise noted)
7
6
5
4
3
2
1
0
0
Fig. 1 - Max. Reverse Power Dissipation vs.
R
40
thJA
(1)
(1)
Junction Temperature
= 25 K/W
UNIT WEIGHT (g)
80
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
(1)
For technical questions within your region, please contact one of the following:
0.064
0.064
0.064
0.064
2
120
O
3
), 50 mm
R
thJA
BYS10-45
(1)
BYS10-25
BYS10-35
= 100 K/W
160
1.0 A
V
2
2
RRM
35 μm Cu
TEST CONDITIONS
PREFERRED PACKAGE CODE
35 μm Cu
A
= 25 °C unless otherwise noted)
200
A
= 25 °C unless otherwise noted)
T
T
J
J
= 25 °C
= 100 °C
TR3
TR3
TR
TR
SYMBOL
SYMBOL
R
R
R
R
θJA
θJA
θJA
V
I
θJL
R
1000
Fig. 2 - Max. Reverse Current vs. Junction Temperature
F
100
0.1
(1)
(2)
(3)
10
1
0
DiodesEurope@vishay.com
BASE QUANTITY
BYS10-25
BYS10-25
1800
7500
1800
7500
40
Junction Temperature (°C)
BYS10-35
BYS10-35
80
500
500
150
125
100
10
25
13" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
7" diameter plastic tape and reel
V
R
120
= V
DELIVERY MODE
RRM
Document Number: 86013
BYS10-45
BYS10-45
160
Revision: 19-May-10
200
UNIT
UNIT
°C/W
°C/W
mV
mA
μA