S2D-E3/52T Vishay, S2D-E3/52T Datasheet - Page 3

DIODE GPP 1.5A 200V SMB

S2D-E3/52T

Manufacturer Part Number
S2D-E3/52T
Description
DIODE GPP 1.5A 200V SMB
Manufacturer
Vishay
Datasheet

Specifications of S2D-E3/52T

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.15V @ 1.5A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 200V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V
Recovery Time
2000 ns (Typ)
Forward Continuous Current
1.5 A
Max Surge Current
50 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
2.0µs
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
S2D-E3/52TGITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
S2D-E3/52T
Manufacturer:
Vishay Semiconductors
Quantity:
83 790
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88712
Revision: 08-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
0.1
0.1
10
10
1
1
0.3
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
T
J
= 125 °C
Instantaneous Forward Voltage (V)
0.5
20
T
J
= 150 °C
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
T
0.7
40
J
= 150 °C
T
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
J
For technical questions within your region, please contact one of the following:
= 25 °C
T
J
= 125 °C
0.9
60
T
J
DO-214AA (SMB)
= 25 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
1.1
80
Cathode Band
0.008 (0.2)
0 (0)
100
1.3
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Mounting Pad Layout
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.220 REF.
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
0.085 (2.159) MAX.
1
S2A thru S2M
10
10
www.vishay.com
100
100
3

Related parts for S2D-E3/52T