BYG10GHE3/TR Vishay, BYG10GHE3/TR Datasheet - Page 3

DIODE 1.5A 400V STD AVALANCH SMA

BYG10GHE3/TR

Manufacturer Part Number
BYG10GHE3/TR
Description
DIODE 1.5A 400V STD AVALANCH SMA
Manufacturer
Vishay
Datasheet

Specifications of BYG10GHE3/TR

Diode Type
Avalanche
Voltage - Forward (vf) (max) @ If
1.15V @ 1.5A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
1µA @ 400V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4µs
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
4µs
Forward Surge Current Ifsm Max
30A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BYG10GHE3/TR
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
BYG10GHE3/TR
Quantity:
70 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88957
Revision: 03-Jun-09
Figure 2. Max. Average Forward Current vs. Ambient Temperature
A
= 25 °C unless otherwise noted)
0.001
1000
0.01
100
100
1.4
0.4
0.2
1.6
1.2
1.0
0.8
0.6
0.1
10
Figure 3. Reverse Current vs. Junction Temperature
10
0
1
1
25
Figure 1. Forward Current vs. Forward Voltage
0
0
20
R
R
V
T
0.5
θJA
θJA
R
J
50
= 150 °C
= V
≤ 125 K/W
≤ 150 K/W
40
Junction Temperature (°C)
Ambient Temperature (°C)
RRM
V
Half Sine-Wave
R
R
θJA
1.0
= V
≤ 25 K/W
60
RRM
75
T
J
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
1.5
80
100
100
2.0
120
125
2.5
140
160
150
3.0
Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature
5000
4000
3000
2000
1000
Figure 6. Reverse Recovery Time vs. Forward Current
400
350
300
250
200
150
100
50
30
25
20
15
10
5
0
0
0
Figure 5. Diode Capacitance vs. Reverse Voltage
0.1
PDD-Europe@vishay.com
25
0
Vishay General Semiconductor
V
R
= V
0.2
50
BYG10D thru BYG10Y
RRM
Junction Temperature (°C)
T
Forward Current (A)
Reverse Voltage (V)
A
1
= 100 °C
0.4
75
P
R
- Limit at 80 % V
T
I
R
A
= 0.5 A, i
P
= 25 °C
100
R
0.6
- Limit at 100 % V
10
T
A
= 50 °C
R
T
= 0.125 A
R
T
A
f = 1 MHz
A
125
= 75 °C
0.8
= 125 °C
www.vishay.com
R
150
100
1.0
3

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