10MQ100NTRPBF Vishay, 10MQ100NTRPBF Datasheet - Page 2

• Manufacturer Part Number: 10MQ100NTRPBF
• Description: DIODE SCHOTTKY 100V 1.5A SMA
• Manufacturer: Vishay

Specifications of 10MQ100NTRPBF

• Voltage - Forward (vf) (max) @ If: 780mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2.1A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1.5 A
• Max Surge Current: 120 A
• Configuration: Single
• Forward Voltage Drop: 0.85 V
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 10MQ100NPBFTR; VS-10MQ100NPBFTR; VS-10MQ100NPBFTR; VS-10MQ100NTRPBF; VS10MQ100NPBFTR; VS10MQ100NTRPBF

Document Number: 94119
10MQ100NPbF
Bulletin PD-20774 06/04
Voltage Ratings
Thermal-Mechanical Specifications
Absolute Maximum Ratings
Electrical Specifications
V
V
I
I
E
I
T
T
R
wt
(*) dPtot
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
t
AS
S
J
stg
R
RWM
FM
F(TO)
thJA
T
dTj
Parameters
Parameters
Parameters
Max. Junction Temperature Range (*) - 55 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
* See Fig. 4
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6, T
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
(Rated V
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
J
= 25°C
(1)
0.07(0.002) g (oz.)
- 55 to 150
10MQ Units
10MQ Units
10MQ
10000
0.78
0.85
0.63
0.68
0.52
78.4
120
1.5
1.0
0.5
0.1
2.0
30
38
80
1
SMA
IR1J
Units
°C/W DC operation
V/µs
mA
mΩ
mJ
mA
nH
pF
°C
°C
A
A
A
V
V
V
V
V
50% duty cycle @ T
On PC board 9mm
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
@ 1.5A
Similar D-64
@ 1A
@ 1.5A
@ 1A
T
T
T
V
Measured lead to lead 5mm from package body
J
J
J
J
R
= 25 °C, I
= 25 °C
= 125 °C
= T
= 10V
J
max.
DC
AS
, T
Conditions
= 0.5A, L = 8mH
Conditions
Conditions
J
= 25°C, test signal = 1Mhz
2
T
T
V
10MQ100NPbF
island (.013mm thick copper pad area)
J
J
R
L
= 25 °C
= 126 °C, rectangular wave form.
= 125 °C
= rated V
100
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2