U2D-E3/5BT Vishay, U2D-E3/5BT Datasheet - Page 3

• Manufacturer Part Number: U2D-E3/5BT
• Description: DIODE 2A 200V SM ULTFAST DO214AA
• Manufacturer: Vishay

Specifications of U2D-E3/5BT

• Voltage - Forward (vf) (max) @ If: 900mV @ 2A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 27ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89096
Revision: 13-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.1
10
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.060 (1.52)
0.030 (0.76)
20
T
A
0.3
= 125 °C
Instantaneous Forward Voltage (V)
30
T
A
0.5
40
= 150 °C
T
T
A
A
[e-mail], [e-mail],
50
= 150 °C
= 125 °C
For technical questions within your region, please contact one of the following:
DO-214AA (SMB)
0.7
T
T
A
A
60
= 25 °C
= 100 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
T
Cathode Band
A
0.9
= 25 °C
70
T
A
0.008 (0.2)
= 100 °C
80
0 (0)
1.1
90
1.3
100
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
New Product
0.060 (1.52) MIN.
0.086 (2.18) MIN.
1000
100
100
10
10
1
1
0.01
0.1
[e-mail]
Fig. 6 - Typical Transient Thermal Impedance
Junction to Ambient
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
Mounting Pad Layout
0.1
0.220 (5.59) REF.
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
U2B, U2C, U2D
0.085 (2.159) MAX.
10
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
100
3