GI850-E3/54 Vishay, GI850-E3/54 Datasheet - Page 3

• Manufacturer Part Number: GI850-E3/54
• Description: DIODE 3A 50V 200NS SMC
• Manufacturer: Vishay

Specifications of GI850-E3/54

• Voltage - Forward (vf) (max) @ If: 1.25V @ 3A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 200 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88630
Revision: 10-Nov-09
0.01
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.6
Instantaneous Forward Voltage (V)
20
0.8
40
1.0
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Pulse Width = 300 μs
For technical questions within your region, please contact one of the following:
1 % Duty Cycle
T
1.2
T
T
T
J
J
J
J
60
= 100 °C
= 50 °C
= 25 °C
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
100
MIN.
MIN.
10
1
[e-mail]
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
Reverse Voltage (V)
GI850 thru GI858
10
V
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
3