S3BHE3/9AT Vishay, S3BHE3/9AT Datasheet - Page 3

• Manufacturer Part Number: S3BHE3/9AT
• Description: DIODE GPP 3A 100V SMC DO-214AB
• Manufacturer: Vishay

Specifications of S3BHE3/9AT

• Voltage - Forward (vf) (max) @ If: 1.15V @ 2.5A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88713
Revision: 08-Apr-08
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
100
0.1
0.1
10
10
1
1
0.6
0
T
Pulse Width = 300 µs
1 % Duty Cycle
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.079 (2.06)
0.103 (2.62)
0.9
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
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1.0
60
1.1
T
DO-214AB (SMC)
T
J
J
80
= 125 °C
= 25 °C
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
1.2
Cathode Band
100
1.3
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
MIN.
100
100
0.1
10
10
1
0.01
Figure 6. Typical Transient Thermal Impedance
1
Mounted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.1
0.320 REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.060 (1.52)
MIN.
0.185 (4.69)
10
1
MAX.
S3A thru S3M
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3