1N5818TR Vishay, 1N5818TR Datasheet - Page 3

• Manufacturer Part Number: 1N5818TR
• Description: DIODE SCHOTTKY 30V 1A DO-41
• Manufacturer: Vishay

Specifications of 1N5818TR

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single
• Forward Voltage Drop: 0.875 V at 3.1 A
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1N5818IRTR; VS-1N5818IRTR; VS-1N5818IRTR; VS-1N5818TR; VS1N5818IRTR; VS1N5818TR

Document Number: 88525
Revision: 20-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
0.001
1000
0.01
100
0.01
100
1.0
0.1
1.0
10
0.1
50
10
10
0
0.1
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
T
0.2
J
= 125 °C
Instantaneous Forward Voltage (V)
T
20
J
= 125 °C
0.4
T
Reverse Voltage (V)
0.6
J
40
1
= 75 °C
T
0.8
J
= 25 °C
60
Pulse Width = 300 µs
1 % Duty Cycle
1.0
T
J
= 25 °C
1.2
10
80
T
f = 1.0 MHz
V
J
sig
= 25 °C
1.4
= 50 mVp-p
1N5817
100
1.6
100
100
400
100
10
0.1
10
1
0.1
0.01
Figure 7. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 6. Typical Junction Capacitance
1N5817, 1N5818, 1N5819
0.1
Reverse Voltage (V)
t - Pulse Duration (s)
1
1
10
1N5818 & 1N5819
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3