UG2B-E3/54 Vishay, UG2B-E3/54 Datasheet - Page 3

• Manufacturer Part Number: UG2B-E3/54
• Description: DIODE 2A 100V 15NS UF DO204AC
• Manufacturer: Vishay

Specifications of UG2B-E3/54

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 950mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 950mV
• Reverse Recovery Time Trr Max: 15ns
• Forward Surge Current Ifsm Max: 80A
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 15 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 80 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88761
Revision: 23-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
T
Percent of Rated Peak Reverse Voltage (%)
J
= 125 °C
0.4
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 150 °C
40
[e-mail], [e-mail],
T
T
T
T
For technical questions within your region, please contact one of the following:
T
J
J
J
J
0.8
J
= 150 °C
= 125 °C
= 100 °C
= 25 °C
= 25 °C
60
T
J
1.0
= 100 °C
80
1.2
100
1.4
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
100
60
50
40
30
20
10
10
0
1
0.1
0
[e-mail]
Vishay General Semiconductor
Fig. 5 - Reverse Switching Charateristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 2.0 A
= 30 V
25
Q
t
rr
rr
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
UG2A thru UG2D
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
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p-p
175
100
3