MURS120-E3/5BT Vishay, MURS120-E3/5BT Datasheet - Page 3

• Manufacturer Part Number: MURS120-E3/5BT
• Description: DIODE 1A 200V 25NS UF SMD
• Manufacturer: Vishay

Specifications of MURS120-E3/5BT

• Voltage - Forward (vf) (max) @ If: 875mV @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.875 V at 1 A
• Recovery Time: 35 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 40 A
• Reverse Current Ir: 2 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: MURS120-E3/52T

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88687
Revision: 27-Aug-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
20
0.060 (1.52)
0.030 (0.76)
0.6
T
J
40
= 175 °C
0.8
T
[e-mail], [e-mail], [e-mail]
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
J
T
1.0
DO-214AA (SMB)
= 100 °C
J
60
= 100 °C
0.180 (4.57)
0.160 (4.06)
0.220 (5.59)
0.205 (5.21)
Cathode Band
1.2
T
J
0.008 (0.2)
80
= 25 °C
1.4
0 (0)
100
1.6
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52) MIN.
0.086 (2.18) MIN.
1000
100
10
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.220 REF.
Reverse Voltage (V)
1
0.085 (2.159) MAX.
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
MURS120
www.vishay.com
100
3