GI750-E3/54 Vishay, GI750-E3/54 Datasheet - Page 3

6 AMP 50 PIV SILICON RECT P600

GI750-E3/54

Manufacturer Part Number
GI750-E3/54
Description
6 AMP 50 PIV SILICON RECT P600
Manufacturer
Vishay
Datasheet

Specifications of GI750-E3/54

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
900mV @ 6A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
6A
Current - Reverse Leakage @ Vr
5µA @ 50V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2.5µs
Mounting Type
Through Hole
Package / Case
P600, Axial
Repetitive Reverse Voltage Vrrm Max
50V
Forward Current If(av)
6A
Forward Voltage Vf Max
900mV
Reverse Recovery Time Trr Max
2.5µs
Forward Surge Current Ifsm Max
400A
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1.25 V at 100 A
Recovery Time
2500 ns
Forward Continuous Current
6 A
Max Surge Current
400 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details
Other names
GI750
GI750-E3/54GITR
GI750/4
GI750/4TR
GI750/4TR
GI750TR
GI750TR
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88627
Revision: 28-Oct-09
0.01
100
0.1
10
1
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics
20
T
T
T
J
J
J
40
= 125 °C
= 100 °C
= 25 °C
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
60
80
0.360 (9.1)
0.340 (8.6)
0.048 (1.22)
100
0.052 (1.32)
DIA.
P600
0.360 (9.1)
0.340 (8.6)
1.0 (25.4)
1.0 (25.4)
100
MIN.
MIN.
0.1
10
1
0.01
DiodesEurope@vishay.com
Fig. 6 - Typical Transient Thermal Impedance
0.20" x 0.27" (5.0 mm x 7.0 mm)
Vishay General Semiconductor
Copper Pad Areas
Mounted on
0.1
t - Pulse Duration (s)
GI750 thru GI758
1
10
www.vishay.com
100
3

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