U3D-E3/9AT Vishay, U3D-E3/9AT Datasheet - Page 3

• Manufacturer Part Number: U3D-E3/9AT
• Description: DIODE 3A 200V SM ULTFAST DO214AB
• Manufacturer: Vishay

Specifications of U3D-E3/9AT

• Voltage - Forward (vf) (max) @ If: 900mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.9 V
• Recovery Time: 30 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 89066
Revision: 13-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.1
Fig. 4 - Typical Reverse Leakage Characteristics
10
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
Percent of Rated Peak Reverse Voltage (%)
0.060 (1.52)
0.030 (0.76)
T
20
A
= 100 °C
0.3
Instantaneous Forward Voltage (V)
T
A
30
= 125 °C
T
A
0.5
T
T
T
40
= 150 °C
A
A
A
= 150 °C
= 125 °C
= 100 °C
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T
50
A
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= 25 °C
DO-214AB (SMC)
0.7
60
0.280 (7.11)
0.260 (6.60)
0.320 (8.13)
0.305 (7.75)
Cathode Band
T
A
0.9
70
= 25 °C
0.008 (0.2)
80
0 (0)
1.1
90
100
1.3
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
New Product
0.060 (1.52) MIN.
0.126 (3.20) MIN.
100
100
0.1
10
10
1
0.001
0.1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Junction to Ambient
Fig. 5 - Typical Junction Capacitance
0.01
Mounting Pad Layout
0.320 (8.13) REF.
t - Pulse Duration (s)
Reverse Voltage (V)
1
0.1
U3B, U3C, U3D
1
0.185 (4.69) MAX.
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mV
10
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p-p
100
100
3