SS8PH10-M3/87A Vishay, SS8PH10-M3/87A Datasheet - Page 3
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SS8PH10-M3/87A
Manufacturer Part Number
SS8PH10-M3/87A
Description
DIODE SCHOTTKY 8A 100V SMP
Manufacturer
Vishay
Series
eSMP™r
Datasheet
1.SS8PH10HM387A.pdf
(5 pages)
Specifications of SS8PH10-M3/87A
Voltage - Forward (vf) (max) @ If
900mV @ 8A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
8A
Current - Reverse Leakage @ Vr
2µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TO-277A (SMPC)
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
8 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.85 V
Maximum Reverse Leakage Current
110 uA
Operating Temperature Range
- 55 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
RATINGS AND CHARACTERISTICS CURVES
Document Number: 88989
Revision: 24-Nov-09
(T
A
Figure 3. Typical Instantaneous Forward Characteristics
= 25 °C unless otherwise noted)
100
0.01
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
10
Figure 1. Maximum Forward Current Derating Curve
0.1
10
9
8
7
6
5
4
3
2
1
0
0
1
100
0.1
0
Figure 2. Forward Power Loss Characteristics
T
T
at the Cathode Band Terminal
0.2
Resistive or Inductive Load
1.0
110
A
L
= 125 °C
measured
T
Instantaneous Forward Voltage (V)
0.3
A
2.0
= 150 °C
Average Forward Current (A)
120
D = 0.1
Lead Temperature (°C)
0.4
3.0
D = 0.2
T
130
A
0.5
= 175 °C
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
4.0
140
D = 0.3
For technical questions within your region, please contact one of the following:
0.6
5.0
T
0.7
150
A
= 25 °C
D = 0.5
D = t
6.0
0.8
p
160
/T
7.0
0.9
D = 1.0
D = 0.8
T
170
t
8.0
p
1.0
180
1.1
9.0
10 000
0.001
1000
1000
0.01
100
100
100
0.1
10
10
10
1
1
0.01
0.1
10
Figure 6. Typical Transient Thermal Impedance
DiodesEurope@vishay.com
Vishay General Semiconductor
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
Junction to Ambient
20
T
A
= 25 °C
30
0.1
T
A
T
t - Pulse Duration (s)
A
= 150 °C
Reverse Voltage (V)
40
1
= 175 °C
SS8PH9, SS8PH10
T
A
50
= 125 °C
1
60
70
10
10
80
90
www.vishay.com
100
100
100
3