ESH3D-E3/9AT Vishay, ESH3D-E3/9AT Datasheet - Page 3

• Manufacturer Part Number: ESH3D-E3/9AT
• Description: DIODE 3A 200V 25NS DO-214AB SMC
• Manufacturer: Vishay

Specifications of ESH3D-E3/9AT

• Voltage - Forward (vf) (max) @ If: 900mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.9 V
• Recovery Time: 25 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 125 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 84648
Revision: 21-Jul-09
1000
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
T
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
J
Percent of Rated Peak Reverse Voltage (%)
0.060 (1.52)
0.030 (0.76)
= 125 °C
T
J
= 150 °C
Instantaneous Forward Voltage (V)
0.4
20
T
J
= 175 °C
T
T
J
J
0.6
40
T
= 125 °C
= 175 °C
T
J
J
= 150 °C
= 25 °C
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DO-214AB (SMC)
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0.280 (7.11)
0.260 (6.60)
0.320 (8.13)
0.305 (7.75)
0.8
60
Cathode Band
T
J
= 25 °C
0.008 (0.2)
1.0
0 (0)
80
100
1.2
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
New Product
0.060 (1.52) MIN.
0.126 (3.20) MIN.
1000
100
100
10
10
1
1
0.01
0.1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
ESH3B, ESH3C & ESH3D
Fig. 5 - Typical Junction Capacitance
Mounting Pad Layout
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
0.320 REF.
1
0.185 (4.69) MAX.
10
10
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100
100
3