SS12P3L-M3/87A Vishay, SS12P3L-M3/87A Datasheet - Page 3

• Manufacturer Part Number: SS12P3L-M3/87A
• Description: DIODE SCHOTTKY 12A 30V SMPC
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SS12P3L-M3/87A

• Voltage - Forward (vf) (max) @ If: 560mV @ 12A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 12A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 12 A
• Max Surge Current: 280 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.56 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
Document Number: 89002
Revision: 29-Sep-10
(T
A
Figure 3. Typical Instantaneous Forward Characteristics
= 25 °C unless otherwise noted)
0.01
100
Figure 1. Maximum Forward Current Derating Curve
0.1
14
12
10
10
8
6
4
2
0
7
6
5
4
3
2
1
0
1
100
0
0
Figure 2. Forward Power Loss Characteristics
D = 0.1
T
T
at the Cathode Band Terminal
A
L
= 125 °C
0.1
measured
2
Instantaneous Forward Voltage (V)
110
T
Average Forward Current (A)
A
D = 0.2
= 150 °C
0.2
Lead Temperature (°C)
4
120
D = 0.3
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0.3
6
Resistive or Inductive Load
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D = 0.5
0.4
8
130
T
D = t
A
= 25 °C
D = 0.8
0.5
10
p
/T
140
T
0.6
12
D = 1.0
t
p
150
0.7
14
10 000
0.001
1000
1000
0.01
100
100
100
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
0.01
Figure 6. Typical Transient Thermal Impedance
10
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Figure 5. Typical Junction Capacitance
20
30
0.1
T
A
= 150 °C
t - Pulse Duration (s)
Reverse Voltage (V)
40
1
SS12P2L, SS12P3L
T
A
T
= 25 °C
A
50
= 125 °C
1
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
80
= 50 mVp-p
90
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100
100
100
3