SS10P5-M3/86A Vishay, SS10P5-M3/86A Datasheet - Page 3

• Manufacturer Part Number: SS10P5-M3/86A
• Description: DIODE SCHOTTKY 10A 50V SMPC
• Manufacturer: Vishay
• Series: eSMP™r

Specifications of SS10P5-M3/86A

• Voltage - Forward (vf) (max) @ If: 550mV @ 7A
• Voltage - Dc Reverse (vr) (max): 50V
• Current - Average Rectified (io): 7A
• Current - Reverse Leakage @ Vr: 150µA @ 50V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Repetitive Reverse Voltage Vrrm Max: 50V
• Forward Current If(av): 10A
• Forward Voltage Vf Max: 670mV
• Forward Surge Current Ifsm Max: 280A
• Operating Temperature Range: -55°C To
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
Document Number: 89043
Revision: 24-Nov-09
(T
A
Figure 3. Typical Instantaneous Forward Characteristics
= 25 °C unless otherwise noted)
0.01
100
Figure 1. Maximum Forward Current Derating Curve
0.1
12
10
10
8
6
4
2
0
7
6
5
4
3
2
1
0
1
0
0
0
Figure 2. Forward Power Loss Characteristics
T
D = 0.1
A
0.1
T
at the Cathode Band Terminal
= 125 °C
L
25
measured
Instantaneous Forward Voltage (V)
2
D = 0.2
0.2
T
A
Average Forward Current (A)
= 150 °C
50
Lead Temperature (°C)
0.3
D = 0.3
4
0.4
[e-mail], [e-mail],
75
T
0.5
For technical questions within your region, please contact one of the following:
Resistive or Inductive Load
A
6
= 25 °C
100
D = 0.5 D = 0.8
0.6
D = t
8
0.7
125
p
/T
D = 1.0
0.8
10
150
T
t
p
0.9
175
1.0
12
10 000
0.0001
1000
0.001
0.01
100
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.01
0.1
10
Figure 6. Typical Transient Thermal Impedance
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
Figure 5. Typical Junction Capacitance
20
30
0.1
T
A
Reverse Voltage (V)
t - Pulse Duration (s)
40
1
= 150 °C
50
SS10P5, SS10P6
1
60
T
T
A
A
10
70
= 25 °C
= 125 °C
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
80
= 50 mV
90
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p-p
100
100
100
3