EGP30F-E3/73 Vishay, EGP30F-E3/73 Datasheet - Page 3

• Manufacturer Part Number: EGP30F-E3/73
• Description: DIODE 3A 300V 50NS GP20 AXIAL
• Manufacturer: Vishay

Specifications of EGP30F-E3/73

• Voltage - Forward (vf) (max) @ If: 1.25V @ 3A
• Voltage - Dc Reverse (vr) (max): 300V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: GP20, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88584
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
T
J
0.4
= 150 °C
Instantaneous Forward Voltage (V)
20
0.6
T
0.8
J
40
= 150 °C
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Pulse Width = 300 μs
1.0
1 % Duty Cycle
T
T
T
EGP30A thru EGP30D
EGP30F and EGP30G
J
J
J
60
= 25 °C
= 125 °C
= 75 °C
1.2
T
J
1.4
= 25 °C
80
This datasheet is subject to change without notice.
1.6
100
0.210 (5.3)
0.190 (4.8)
1.8
0.042 (1.07)
0.037 (0.94)
DIA.
DIA.
GP20
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
210
180
150
120
100
MIN.
MIN.
0.1
90
60
30
10
0
1
0.01
0
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
EGP30A thru EGP30D
EGP30F and EGP30G
EGP30A thru EGP30G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
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T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
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p-p
1000
100
3