EGP50B-E3/73 Vishay, EGP50B-E3/73 Datasheet - Page 3

• Manufacturer Part Number: EGP50B-E3/73
• Description: DIODE 5A 100V 50NS GP20 AXIAL
• Manufacturer: Vishay

Specifications of EGP50B-E3/73

• Voltage - Forward (vf) (max) @ If: 950mV @ 5A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: GP20, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88585
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
Pulse Width = 300 μs
T
Percent of Rated Peak Reverse Voltage (%)
1 % Duty Cycle
J
0.4
= 150 °C
Instantaneous Forward Voltage (V)
20
0.6
T
0.8
J
40
= 150 °C
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For technical questions within your region, please contact one of the following:
1.0
T
T
J
J
EGP20A thru EGP20D
EGP20F and EGP20G
60
= 125 °C
= 75 °C
1.2
T
J
= 25 °C
1.4
T
J
80
= 25 °C
This datasheet is subject to change without notice.
1.6
100
0.210 (5.3)
0.190 (4.8)
1.8
0.042 (1.07)
0.037 (0.94)
DIA.
DIA.
GP20
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
210
180
150
120
100
MIN.
MIN.
0.1
90
60
30
10
0
1
0.01
0.1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
EGP20A thru EGP20D
EGP20F and EGP20G
EGP50A thru EGP50G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
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p-p
1000
100
3