VI10150S-E3/4W Vishay, VI10150S-E3/4W Datasheet

VI10150S-E3/4W

Manufacturer Part Number

VI10150S-E3/4W

Description

DIODE SCHOTTKY 10A 150V TO-262AA

Manufacturer

Vishay

Datasheet

1.V10150S-E34W.pdf (5 pages)

Specifications of VI10150S-E3/4W

Voltage - Forward (vf) (max) @ If

1.2V @ 10A

Voltage - Dc Reverse (vr) (max)

150V

Current - Average Rectified (io)

10A

Current - Reverse Leakage @ Vr

150µA @ 150V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Through Hole, Radial

Package / Case

I²Pak, TO-262 (3 straight leads + tab)

Product

Schottky Rectifiers

Peak Reverse Voltage

150 V

Forward Continuous Current

10 A

Max Surge Current

120 A

Configuration

Single Dual Anode

Forward Voltage Drop

1.2 V

Maximum Reverse Leakage Current

150 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Document Number: 89058

Revision: 24-Jun-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Non-repetitive avalanche energy at T

Peak repetitive reverse current

at t

Voltage rate of change (rated V

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

Operating junction and storage temperature range

= 2 µs, 1 kHz, T

PIN 3

PIN 1

TO-220AB

TO-263AB

VB10150S

V10150S

at I

F(AV)

FSM

High-Voltage Trench MOS Barrier Schottky Rectifier

RRM

max.

= 10 A

HEATSINK

CASE

PIN 2

= 38 °C ± 2 °C

TMBS

PDD-Americas@vishay.com, PDD-Asia@vishay.com,

For technical questions within your region, please contact one of the following:

)

= 25 °C unless otherwise noted)

= 25 °C, L = 60 mH

PIN 1

PIN 3

PIN 1

PIN 3

Ultra Low V

ITO-220AB

150 °C

VF10150S

TO-262AA

0.69 V

VI10150S

150 V

120 A

10 A

V10150S, VF10150S, VB10150S & VI10150S

PIN 2

New Product

SYMBOL

= 0.59 V at I

dV/dt

, T

F(AV)

RRM

FSM

RRM

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Trench MOS Schottky technology

• Low forward voltage drop, low power

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF

• Solder bath temperature 275 °C maximum, 10 s,

• Compliant to RoHS directive 2002/95/EC and in

losses

maximum peak of 245 °C (for TO-263AB package)

per JESD 22-B106 (for TO-220AB, ITO-220AB,

and TO-262AA package)

accordance to WEEE 2002/96/EC

V10150S

PDD-Europe@vishay.com

TO-220AB,

= 5 A

Vishay General Semiconductor

VF10150S

- 55 to + 150

10 000

1500

150

120

ITO-220AB,

0.5

VB10150S

VI10150S

TO-263AB

www.vishay.com

UNIT

V/µs

°C

and

Related parts for VI10150S-E3/4W

VI10150S-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 89058 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor Ultra Low FEATURES • ...

Page 2

... Pulse test: Pulse width ≤ THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V10150S-E3/4W ITO-220AB VF10150S-E3/4W TO-263AB VB10150S-E3/4W TO-263AB VB10150S-E3/8W TO-262AA VI10150S-E3/4W RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted Resistive or Inductive Load V(B,I)10150S 10 8 VF10150S Mounted on Specific Heatsink 0 ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 89058 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V10150S, VF10150S, VB10150S & VI10150S 10 1 1.2 1.4 1.6 0.01 Figure 6. Typical Transient Thermal Impedance ...

Page 4

... V10150S, VF10150S, VB10150S & VI10150S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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