MBRB1635-E3/45 Vishay, MBRB1635-E3/45 Datasheet - Page 3
![DIODE SCHOTT 16A 35V SGL TO263AB](/photos/5/29/52982/vishay-d2pak_sml.jpg)
MBRB1635-E3/45
Manufacturer Part Number
MBRB1635-E3/45
Description
DIODE SCHOTT 16A 35V SGL TO263AB
Manufacturer
Vishay
Datasheet
1.MBR1635-E345.pdf
(5 pages)
Specifications of MBRB1635-E3/45
Voltage - Forward (vf) (max) @ If
630mV @ 16A
Voltage - Dc Reverse (vr) (max)
35V
Current - Average Rectified (io)
16A
Current - Reverse Leakage @ Vr
200µA @ 35V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
35 V
Forward Continuous Current
16 A
Max Surge Current
150 A
Configuration
Single
Forward Voltage Drop
0.63 V
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Document Number: 88671
Revision: 08-Nov-07
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
0.01
100
0.1
0.1
10
10
1
1
0
0
T
Figure 4. Typical Reverse Characteristics
J
Percent of Rated Peak Reverse Voltage (%)
= 150 °C
0.2
MBR1635 - MBR1645
MBR1650 - MBR1660
Instantaneous Forward Voltage (V)
20
0.4
T
J
40
= 25 °C
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
0.6
For technical questions within your region, please contact one of the following:
Pulse Width = 300 µs
1 % Duty Cycle
60
MBR1635 - MBR1645
MBR1650 - MBR1660
T
T
T
0.8
J
J
J
= 125 °C
= 75 °C
= 25 °C
80
1.0
100
1.2
MBR(F,B)1635 thru MBR(F,B)1660
10 000
1000
100
100
0.1
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
MBR1635 - MBR1645
MBR1650 - MBR1660
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
www.vishay.com
100
100
3