8ETH03 Vishay, 8ETH03 Datasheet - Page 4

• Manufacturer Part Number: 8ETH03
• Description: DIODE UFAST 300V 8A TO-220AC
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of 8ETH03

• Voltage - Forward (vf) (max) @ If: 1.25V @ 8A
• Voltage - Dc Reverse (vr) (max): 300V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 20µA @ 300V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Fused Center, TO-220AC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: *8ETH03; VS-8ETH03; VS-8ETH03; VS8ETH03; VS8ETH03

8ETH03PbF
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
180
170
160
150
140
130
10
Fig. 5 - Maximum Allowable Case Temperature vs.
8
6
4
2
0
0
0
Fig. 6 - Forward Power Loss Characteristics
Square wave (D = 0.50)
Rated V
See note (1)
C
I
I
F(AV)
F(AV)
= T
2
2
J
- Average Forward Current (A)
- Average Forward Current (A)
R
Average Forward Current
- (Pd + Pd
applied
DC
4
4
F(AV)
R1
6
REV
x V
x I
6
DC
FM
) x R
R
8
(1 - D); I
For technical questions, contact: [e-mail]
at (I
thJC
8
F(AV)
10
;
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
R
/D) (see fig. 6);
RMS limit
at V
10
12
R1
Hyperfast Rectifier,
= Rated V
14
12
8 A FRED Pt
R
TM
1000
100
100
10
10
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
Fig. 8 - Typical Stored Charge vs. dI
I
F
= 8 A , T
I
F
I
F
dI
dI
= 8 A , T
= 8 A , T
F
F
I
F
/dt (A/µs)
/dt (A/µs)
J
= 8 A , T
= 25 °C
J
J
Document Number: 94024
= 125 °C
= 25 °C
J
= 125 °C
Revision: 08-Apr-08
F
/dt
1000
1000
F
/dt