FESF16BTHE3/45 Vishay, FESF16BTHE3/45 Datasheet

FESF16BTHE3/45

Manufacturer Part Number

FESF16BTHE3/45

Description

DIODE 16A 100V 35NS SGL TO220-2

Manufacturer

Vishay

Datasheet

1.FEP16AT-E345.pdf (5 pages)

Specifications of FESF16BTHE3/45

Voltage - Forward (vf) (max) @ If

975mV @ 16A

Voltage - Dc Reverse (vr) (max)

100V

Current - Average Rectified (io)

16A

Current - Reverse Leakage @ Vr

10µA @ 100V

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

35ns

Mounting Type

Through Hole

Package / Case

TO-220-2 Full Pack, ITO-220AC

Product

Ultra Fast Recovery Rectifier

Configuration

Single

Reverse Voltage

100 V

Forward Voltage Drop

0.975 V

Recovery Time

35 ns

Forward Continuous Current

16 A

Max Surge Current

250 A

Reverse Current Ir

10 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FESF16BTHE3/45

Manufacturer:

Vishay Semiconductors

Quantity:

640

Current page: 1 of 5
Download datasheet (143Kb)

Document Number: 88596

Revision: 07-Nov-07

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward

rectified current at T

Peak forward surge current 8.3 ms

single half sine-wave superimposed

on rated load per diode

Operating storage and temperature range

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

FEP16xT

PIN 1

PIN 3

TO-220AB

F(AV)

FSM

RRM

max.

Dual Common-Cathode Ultrafast Plastic Rectifier

PIN 2

CASE

= 100 °C

FEPB16xT

PIN 2

PIN 1

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

0.95 V, 1.30 V, 1.50 V

HEATSINK

FEPF16xT

PIN 1

PIN 3

50 V to 600 V

ITO-220AB

200 A, 125 A

35 ns, 50 ns

8.0 A x 2

SYMBOL

150 °C

F(AV)

, T

FSM

RRM

RMS

STG

PIN 2

16AT

FEP

16BT

FEP

100

FEP(F,B)16AT thru FEP(F,B)16JT

200

FEATURES

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• High forward surge capability

• AEC Q101 qualified

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB and

• Component in accordance to RoHS 2002/95/EC

16CT

peak of 245 °C (for TO-263AB package)

ITO-220AB package)

and WEEE 2002/96/EC

FEP

150

105

150

Vishay General Semiconductor

16DT

FEP

200

140

200

- 55 to +150

1500

16FT

FEP

300

210

300

16GT

FEP

400

280

400

125

16HT

FEP

500

350

500

www.vishay.com

16JT

FEP

600

420

600

UNIT

°C

Related parts for FESF16BTHE3/45

FESF16BTHE3/45 Summary of contents

Page 1

... Isolation voltage (ITO-220AB only) from terminal to heatsink min Document Number: 88596 For technical questions within your region, please contact one of the following: Revision: 07-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEP(F,B)16AT thru FEP(F,B)16JT FEATURES ITO-220AB • Glass passivated chip junction • Ultrafast recovery time • ...

Page 2

... FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 8.0 A (1) forward voltage per diode Maximum DC reverse current per diode at rated DC blocking voltage Maximum reverse recovery time per diode Typical junction capacitance 4 MHz per diode Note: (1) Pulse test: 300 µ ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88596 For technical questions within your region, please contact one of the following: Revision: 07-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEP(F,B)16AT thru FEP(F,B)16JT 100 10 1 0.1 0.01 150 0 Figure 4 ...

Page 4

... FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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