8ETX06FPPBF Vishay, 8ETX06FPPBF Datasheet - Page 5

• Manufacturer Part Number: 8ETX06FPPBF
• Description: DIODE HYPERFAST 600V 8A TO220FP
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of 8ETX06FPPBF

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 3V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 24ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack Fused Center, ITO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 3 V
• Recovery Time: 24 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 110 A
• Reverse Current Ir: 50 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Repetitive Reverse Voltage Vrrm Max: 600V
• Forward Current If(av): 8A
• Forward Voltage Vf Max: 3V
• Reverse Recovery Time Trr Max: 17ns
• Forward Surge Current Ifsm Max: 110A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *8ETX06FPPBF; VS-8ETX06FPPBF; VS-8ETX06FPPBF; VS8ETX06FPPBF; VS8ETX06FPPBF

Document Number: 94032
Revision: 29-Jun-10
50
40
30
20
10
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
V
T
T
R
J
J
= 125 °C
= 25 °C
= 390 V
I
F
= 8 A
dI
F
[e-mail], [e-mail],
/dt (A/µs)
For technical questions within your region, please contact one of the following:
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
RRM
through zero crossing
rr
I
I
F
F
F
I
- reverse recovery time measured
F
/dt - rate of change of current
= 16 A
= 16 A
- peak reverse recovery current
F
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
I
F
Fig. 11 - Reverse Recovery Parameter Test Circuit
Hyperfast Rectifier, 8 A FRED Pt
= 8 A
RRM
and 0.50 I
1000
(1)
adjust
F
dI
/dt
F
/dt
dI
F
/dt
RRM
L = 70 μH
G
t
a
VS-8ETX06PbF, VS-8ETX06FPPbF
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
300
250
200
150
100
50
RRM
t
D.U.T.
/dt - peak rate of change of
0
b
100
RRM
[e-mail]
dI
0.5 I
Fig. 10 - Typical Stored Charge vs. dI
Q
(rec)M
V
T
T
rr
J
J
R
Q
=
= 125 °C
= 25 °C
RRM
b
= 390 V
rr
/dt
portion of t
t
(4)
rr
®
x I
(5)
2
RRM
Vishay Semiconductors
I
F
dI
= 16 A
rr
F
/dt (A/µs)
rr
I
F
= 16 A
I
I
F
F
= 8 A
= 8 A
www.vishay.com
F
/dt
1000
5