RLS-73TE-11 Rohm Semiconductor, RLS-73TE-11 Datasheet
RLS-73TE-11
Manufacturer Part Number
RLS-73TE-11
Description
DIODE 80V 130MA LL-34
Manufacturer
Rohm Semiconductor
Datasheet
1.RLS-73TE-11.pdf
(4 pages)
Specifications of RLS-73TE-11
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Voltage - Dc Reverse (vr) (max)
80V
Current - Average Rectified (io)
130mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0.5V, 1MHz
Mounting Type
Surface Mount
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Forward Current If(av)
130mA
Repetitive Reverse Voltage Vrrm Max
90V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
600mA
Operating Temperature
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RLS-73TE-11
Manufacturer:
ROHM
Quantity:
2 937
Part Number:
RLS-73TE-11
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Leadless High Speed Switching Diode
RLS-73
High speed switching
1) Ultra small. (LLDS)
2) For surface mounting
3) High speed (trr=2ns Typ.) & high reliability.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Peak reverse current
Average rectified forw
Surge current
Pow
Junction temperature
Storage temperature
Application
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
er dissipation
Parameter
Parameter
（1s）
ard current
Symbol
Trr
V
Ct
I
R
F
Symbol
Taping dimensions (Unit : mm)
I
Tstg
V
surge
V
I
Io
Tj
FM
P
RM
External dimensions (Unit : mm)
R
Land size figure (Unit : mm)
Min.
ROHM : LLDS
JEDEC : LL-34
ＬＬＤＳ
TE-11
-
-
-
-
1.8±0.2
R 1 . 4
4.0±0.1 2.0±0.05
1 . 4
Typ.
-
-
-
-
-65 to +175
0.4
5 . 0
4.0±0.1
Limits
400
130
600
300
175
Max.
90
80
1.2
2.0
4.0
0.5
1 . 4
3.4±0.2
1.5±0.1
0
CATHODE BAND
Unit
φ1.0±0.2
0
µA
pF
ns
V
0.4
I
V
V
V
F
=100mA
R
R
R
Structure
=80V
=0.5V , f=1MHz
=6.0V,I
Unit
m
mA
mA
mA
℃
℃
V
V
W
(YELLOW)
Conditions
0.3MAX
F
1.6±0.1
=10mA,RL=50Ω
φ1.5MAX
Rev.C
RLS-73
1/3
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RLS-73TE-11 Summary of contents
Page 1
... P 175 Tj -65 to +175 Tstg Symbol Min. Typ. Max 1 0 2.0 Trr - - 4.0 RLS-73 CATHODE BAND (YELLOW) 0.4 φ1.5MAX Structure 0.3MAX φ1.0±0.2 1.6±0.1 0 Unit ℃ ℃ Unit Conditions V I =100mA F µA V =80V R ...
Page 2
... DISPERSION MAP Mounted on epoxy board IM=1mA IF=10mA 1000 Rth(j-a) time 1ms 300us Rth(j-l) 100 Rth(j-c) 10 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RLS-73 10 f=1MHz 1 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1 0.9 Ta=25℃ VR=0.5V 0.8 f=1MHz 0.7 n=10pcs AVE:0.803pF 0.6 0.5 ...
Page 3
... Derating Curveﾞ(Io-Ta 0.3 D=t/T Tj=175℃ T 0.25 DC 0.2 D=1/2 0.15 0.1 Sin(θ＝180) 0.05 0 150 175 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) RLS- VR=40V AVE:7.4kV 10 AVE:2.2kV 5 C=200pF C=100pF 0 R=0Ω R=1.5kΩ 150 175 ESD DISPERSION MAP Rev.C 3/3 ...
Page 4
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...