MBRD330RLG ON Semiconductor, MBRD330RLG Datasheet - Page 2

DIODE SCHOTTKY 3A 30V DPAK

MBRD330RLG

Manufacturer Part Number
MBRD330RLG
Description
DIODE SCHOTTKY 3A 30V DPAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRD330RLG

Voltage - Forward (vf) (max) @ If
600mV @ 3A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
200µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
3 A
Max Surge Current
75 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.7 V @ 6 A
Maximum Reverse Leakage Current
200 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRD330RLG
Manufacturer:
ON Semiconductor
Quantity:
1 800
Part Number:
MBRD330RLG
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBRD330RLG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (T
Peak Repetitive Forward Current, T
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2 ms, 1 kHz)
Operating Junction Temperature Range (Note 1)
Storage Temperature Range
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
i
i
i
i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 3 Amps, T
= 3 Amps, T
= 6 Amps, T
= 6 Amps, T
R
, Square Wave, 20 kHz)
C
C
C
C
= +25°C
= +125°C
= +25°C
= +125°C
C
C
= +25°C)
= +125°C)
R
)
Rating
Rating
C
= +125°C
C
= +125°C, Rated V
http://onsemi.com
R
)
2
Symbol
Symbol
V
V
I
dv/dt
I
I
R
R
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
V
T
qJC
i
stg
qJA
R
R
J
F
320
D
20
/dT
J
< 1/R
330
30
−65 to +175
−65 to +175
qJA
MBRD
10,000
Value
0.625
0.45
340
0.6
0.7
0.2
40
75
80
20
3
6
1
6
.
350
50
360
60
°C/W
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V

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