MUR2100EG ON Semiconductor, MUR2100EG Datasheet - Page 3

• Manufacturer Part Number: MUR2100EG
• Description: DIODE ULTRA FAST 2A 1KV DO-41
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR2100EG

• Voltage - Forward (vf) (max) @ If: 2.2V @ 2A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 2.2 V
• Recovery Time: 100 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 35 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR2100EG; MUR2100EGOS

1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
V
150°C
100°C
25°C
R
@ 175°C
Figure 3. Maximum Reverse Current
200
T
SQUARE WAVE
A
Figure 5. Current Derating
, AMBIENT TEMPERATURE (°C)
50
V
R
, REVERSE VOLTAGE (V)
400
DC
100
100
10
1
0
600
20
40
150
Figure 7. Typical Capacitance
800
V
R
60
, REVERSE VOLTAGE (V)
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MUR2100E
80
1000
200
100 120 140 160 180 200
3
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
4
3
2
1
0
0
0
V
150°C
100°C
25°C
R
@ 175°C
I
F(AV)
Figure 4. Typical Reverse Current
200
0.5
, AVERAGE FORWARD CURRENT (A)
Figure 6. Power Dissipation
V
SQUARE WAVE
R
, REVERSE VOLTAGE (V)
400
1
600
1.5
DC
800
2
1000
2.5