MBRB4030G ON Semiconductor, MBRB4030G Datasheet

DIODE SCHOTTKY 40A 30V D2PAK

MBRB4030G

Manufacturer Part Number
MBRB4030G
Description
DIODE SCHOTTKY 40A 30V D2PAK
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet

Specifications of MBRB4030G

Voltage - Forward (vf) (max) @ If
550mV @ 40A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
40A
Current - Reverse Leakage @ Vr
350µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
40 A
Max Surge Current
300 A
Configuration
Single Dual Anode
Forward Voltage Drop
0.55 V
Maximum Reverse Leakage Current
350 uA
Operating Temperature Range
- 65 C to + 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRB4030G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBRB4030G
Manufacturer:
ON/安森美
Quantity:
20 000
MBRB4030
SWITCHMODEt
Power Rectifier
with a proprietary barrier metal.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Rating applies when pins 1 and 3 are connected.
2. The heat generated must be less than the thermal conductivity from
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 6
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated V
Peak Repetitive Forward Current
(At Rated V
T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current
(2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature Range
(Note 2)
Voltage Rate of Change (Rated V
Reverse Energy (Unclamped Inductive
Surge), (T
These state−of−the−art devices use the Schottky Barrier principle
Leads Readily Solderable
C
Guardring for Stress Protection
Maximum Die Size
175°C Operating Junction Temperature
Short Heat Sink Tab Manufactured − Not Sheared
Pb−Free Packages are Available
Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
Weight: 1.7 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Junction−to−Ambient: dP
= +112°C
C
R
R
= 25°C, L = 3.0 mH)
) T
, Square Wave, 20 kHz),
C
Rating
= +115°C (Note 1)
Human Body Model, 3B (>8000 V)
D
/dT
Preferred Device
J
< 1/R
R
)
qJA
.
Symbol
V
V
I
dv/dt
I
I
I
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
W
stg
R
J
−65 to +175
−65 to +175
10,000
Value
300
600
2.0
30
40
80
1
V/ms
Unit
mJ
°C
°C
V
A
A
A
A
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
40 AMPERES, 30 VOLTS
SCHOTTKY BARRIER
ORDERING INFORMATION
A
Y
WW
B4030
G
AKA
MARKING DIAGRAM
http://onsemi.com
1
RECTIFIER
1
3
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
CASE 418B
3
AY WW
B4030G
AKA
STYLE 3
D
2
PAK
Publication Order Number:
4
4
MBRB4030/D

Related parts for MBRB4030G

MBRB4030G Summary of contents

Page 1

MBRB4030 Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features • Guardring for Stress Protection • Maximum Die Size • 175°C Operating Junction Temperature • Short Heat Sink Tab Manufactured ...

Page 2

... Rating applies when surface mounted on the miniumum pad size recommended. 5. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device MBRB4030 MBRB4030G MBRB4030T4 MBRB4030T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 3

T = 150° 100°C 25°C 1.0 0.1 0 0.1 0.2 0.3 0.4 0 INSTANTANEOUS VOLTAGE (V) F Figure 1. Maximum Forward Voltage 1 150°C J 0.1 100°C 0.01 −3 10 −4 10 25°C ...

Page 4

DC 60 π (RESISTIVE LOAD) 50 SQUARE WAVE 100 110 120 130 T , CASE TEMPERATURE (°C) C Figure 6. Current Derating, Infinite Heatsink π (RESISTIVE LOAD) SQUARE WAVE ...

Page 5

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MBRB4030 PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

Page 6

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MBRB4030 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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