10BQ100 Vishay, 10BQ100 Datasheet - Page 2

• Manufacturer Part Number: 10BQ100
• Description: DIODE SCHOTTKY 100V 1A SMB
• Manufacturer: Vishay

Specifications of 10BQ100

• Voltage - Forward (vf) (max) @ If: 780mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Max Surge Current: 780 A
• Configuration: Single
• Forward Voltage Drop: 0.89 V at 2 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *10BQ100; VS-10BQ100; VS-10BQ100; VS10BQ100; VS10BQ100

Document Number: 94114
10BQ100PbF
Bulletin PD-20786 rev. A 07/04
Electrical Specifications
Absolute Maximum Ratings
Voltage Ratings
Thermal-Mechanical Specifications
(*) dPtot
V
V
V
I
C
L
dv/dt Max. Volatge Rate of Charge
(1) Pulse Width < 300µs, Duty Cycle < 2%
T
T
R
R
wt
(**) Mounted 1 inch square PCB
I
I
E
I
RM
F(AV)
FSM
AR
S
R
RWM
FM
J
stg
thJL
thJA
AS
T
dTj
Parameters
Parameters
Parameters
Max. Junction Temperature Range (*) - 55 to 175
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current (1)
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
(Rated V
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Non- Repetitive Avalanche Energy
Repetitive Avalanche Current
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(1)
(**)
0.10 (0.003) g (oz.)
- 55 to 175
10BQ
10BQ
10BQ Units Conditions
10000
0.78
0.89
0.62
0.72
780
0.5
2.0
1.0
1.0
0.5
42
38
36
80
1
SMB
IR1J
Units
Units
V/ µs
°C/W DC operation
°C/W
mA
mA
pF
nH
mJ
°C
°C
V
V
V
V
A
A
A
@ 1A
@ 2A
@ 1A
@ 2A
T
T
V
Measured lead to lead 5mm from package body
Similar DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
J
R
J
= 25 °C, I
= 25 °C
= 125 °C
= 5V
DC
, (test signal range 100kHz to 1MHz) 25°C
AS
Conditions
Conditions
= 0.5A, L = 8mH
T
T
V
10BQ100PbF
J
J
R
L
= 25 °C
= 125 °C
= rated V
= 152 °C, rectangular wave form
J
max. Va = 1.5 x Vr typical
100
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2