MA2SD1000L Panasonic - SSG, MA2SD1000L Datasheet
MA2SD1000L
Manufacturer Part Number
MA2SD1000L
Description
DIODE SCHOTTKY 20V 200MA SS-MINI
Manufacturer
Panasonic - SSG
Specifications of MA2SD1000L
Voltage - Forward (vf) (max) @ If
470mV @ 200mA
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
20µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
3ns
Capacitance @ Vr, F
25pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SS Mini 2P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MA2SD1000LDKR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MA2SD1000L
Manufacturer:
PANASONI
Quantity:
2 346
Schottky Barrier Diodes (SBD)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
MA2SD10
Silicon epitaxial planar type
For super high speed switching
■ Features
• Forward current (Average) I
• Low forward voltage V
• High-density mounting is possible
■ Absolute Maximum Ratings T
Reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward
surge current
Peak forward current
Forward current (Average)
Junction temperature
Storage temperature
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
3. Absolute frequency of input and output is 250 MHz.
4. * : t
and the leakage of current from the operating equipment.
Parameter
rr
Parameter
measurement circuit
*
Pulse Generator
(PG-10N)
R
s
*
= 50 Ω
F
Bias Application Unit (N-50BU)
F(AV)
Symbol
A
V
I
I
F(AV)
= 200 mA rectification is possible
T
I
V
FSM
RRM
T
FM
stg
R
j
a
Symbol
= 25°C ± 3°C
V
V
V
C
I
t
Wave Form Analyzer
(SAS-8130)
R
a
R
rr
F1
F2
F3
t
i
= 25°C
= 50 Ω
−55 to +125
Rating
300
200
125
20
20
1
I
I
I
V
V
I
I
rr
F
F
F
F
R
R
= 5 mA
= 100 mA
= 200 mA
= I
= 10 mA, R
SKH00026BED
= 10 V
= 0 V, f = 1 MHz
R
= 100 mA
Conditions
Unit
mA
mA
°C
°C
V
V
A
L
= 100 Ω
V
R
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
= 2 µs
Marking Symbol: 2L
t
p
1 : Anode
2 : Cathode
EIAJ : SC-79
5˚
t
0.80
+0.05
–0.03
Min
I
1
2
0.30
F
I
I
R
F
R
±0.05
Output Pulse
L
= 100 mA
= 100 mA
= 100 Ω
Typ
25
0.01
3
t
rr
±0.01
I
rr
SSMini2-F1 Package
= 10 mA
0.60
Max
0.27
0.40
0.47
t
20
+0.05
–0.03
0
+0
–0.05
0.12
Unit: mm
Unit
+0.05
–0.02
µA
pF
ns
V
1
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