10BQ015TR Vishay, 10BQ015TR Datasheet
![DIODE SCHOTTKY 15V 1A SMB](/photos/5/33/53321/698-smb_sml.jpg)
10BQ015TR
Manufacturer Part Number
10BQ015TR
Description
DIODE SCHOTTKY 15V 1A SMB
Manufacturer
Vishay
Specifications of 10BQ015TR
Voltage - Forward (vf) (max) @ If
350mV @ 1A
Voltage - Dc Reverse (vr) (max)
15V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 15V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Rectifiers
Peak Reverse Voltage
15 V
Forward Continuous Current
1 A
Max Surge Current
140 A
Configuration
Single
Forward Voltage Drop
0.44 V at 2 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
VS-10BQ015TR
VS-10BQ015TR
VS10BQ015TR
VS10BQ015TR
VS-10BQ015TR
VS10BQ015TR
VS10BQ015TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
10BQ015TR
Manufacturer:
IR
Quantity:
78 000
Part Number:
10BQ015TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
10BQ015TRPBF
Manufacturer:
IR
Quantity:
21 000
Part Number:
10BQ015TRPBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 94110
Revision: 15-Nov-10
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
T
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
F(AV)
FSM
J
RRM
F
Diode variation
Package
T
V
SMB
J
I
F
E
F(AV)
I
V
max.
RM
at I
AS
R
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Rectangular waveform
t
1.0 Apk, T
Range
p
= 5 μs sine
Cathode
SMB (DO-214AA)
12 mA at 100 °C
SYMBOL
CHARACTERISTICS
I
I
E
F(AV)
Schottky Rectifier, 1.0 A
Single die
FSM
I
AR
AS
125 °C
0.32 V
1 mJ
J
15 V
1 A
= 125 °C
Anode
50 % duty cycle at T
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
T
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
= 25 °C, I
SYMBOL
V
RWM
V
R
AS
= 1 A, L = 2 mH
TEST CONDITIONS
FEATURES
• Ultralow forward voltage drop
• Optimized for OR-ing applications
• Guard ring for enhanced ruggedness and long
• 125 °C T
• High frequency operation
• High purity, high temperature epoxy encapsulation for
• Meets MSL level 1, per J-STD-020, LF maximum peak of
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The VS-10BQ015PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. The proprietary
barrier technology allows for reliable operation up to 125 °C
junction temperature. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
L
= 84 °C, rectangular waveform
term reliability
enhanced mechanical strength and moisture resistance
260 °C
J
maximum V
- 55 to 125
VALUES
DiodesEurope@vishay.com
VS-10BQ015PbF
0.32
140
J
1.0
15
Following any rated load
condition and with rated
V
operation (V
RRM
A
= 1.5 x V
applied
15
25
Vishay Semiconductors
R
R
typical
< 5 V)
VS-10BQ015PbF
VALUES
140
1.0
1.0
1.0
40
UNITS
UNITS
°C
A
V
A
V
www.vishay.com
V
UNITS
mJ
A
A
A
1