8EWF12S Vishay, 8EWF12S Datasheet - Page 2

• Manufacturer Part Number: 8EWF12S
• Description: DIODE FAST REC 1200V 8A TO-252AA
• Manufacturer: Vishay

Specifications of 8EWF12S

• Voltage - Forward (vf) (max) @ If: 1.3V @ 8A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: *8EWF12S; VS-8EWF12S; VS-8EWF12S; VS8EWF12S; VS8EWF12S

Electrical Specifications
Document Number: 93161
I2126 rev. B 10/99
Voltage Ratings
Typical Reverse Recovery Characteristics
QUIET
8EWF..S
Absolute Maximum Ratings
t
I
Q
S
V
r
V
I
I
I
I
I
rr
RM
rr
FSM
F(AV)
2
2
t
FM
F(TO)
rr
t
√t
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Typical Snap Factor
Max. Forward Voltage Drop
Forward slope resistance
Threshold voltage
Max. Reverse Leakage Current
Parameters
Parameters
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Max. I
Parameters
Surge Current
Max. I
Part Number
2
2
t for fusing
√t for fusing
8EWF10S
8EWF12S
IR
Series
tb/ta
peak reverse voltage
8EWF..S
8EWF..S
8EWF..S
V
2000
25.6
0.93
270
170
200
144
200
4.2
0.6
1.3
0.1
RRM
1
4
8
, maximum
1000
1200
V
Units
Units
Units
A
mA
A
mΩ
µC
ns
A
2
V
V
A
A
-
2
√s
s
I
@ 25A/µs
@ T
10ms Sine pulse, rated V
@ T
10ms Sine pulse, rated V
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
T
Conditions
@ 8A, T
T
T
F
J
J
J
@ 8Apk
= 150°C
= 25 °C
= 150 °C
C
J
= 94° C, 180° conduction half sine wave
= 25°C
V
J
RSM
= 25°C
peak reverse voltage
, maximum non repetitive
Conditions
Conditions
1100
1300
V
V
RRM
RRM
R
I
FM
= rated V
di
dt
applied
applied
ta
www.vishay.com
RRM
t
rr
tb
I
rr
Q
150°C
rr
I
mA
RRM
4
t
2