MURB820 Vishay, MURB820 Datasheet - Page 4

• Manufacturer Part Number: MURB820
• Description: DIODE ULTRAFAST 200V 8A D2-PAK
• Manufacturer: Vishay
• Series: FRED Pt™r

Specifications of MURB820

• Voltage - Forward (vf) (max) @ If: 975mV @ 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -
• Other names: *MURB820; VS-MURB820; VS-MURB820; VSMURB820; VSMURB820

MURB820/MURB820-1
Vishay High Power Products
Note
(1)
www.vishay.com
4
Formula used: T
Pd = Forward power loss = I
Pd
REV
= Inverse power loss = V
180
170
160
150
140
130
10
Fig. 5 - Maximum Allowable Case Temperature vs.
8
6
4
2
0
0
0
Fig. 6 - Forward Power Loss Characteristics
See note (1)
C
I
I
F(AV)
F(AV)
Square wave (D = 0.50)
Rated V
= T
J
- Average Forward Current (A)
- Average Forward Current (A)
Average Forward Current
- (Pd + Pd
3
3
R
DC
applied
F(AV)
R1
REV
x V
x I
6
6
FM
) x R
R
(1 - D); I
For technical questions, contact: [e-mail]
at (I
DC
thJC
F(AV)
;
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
9
9
R
/D) (see fig. 6);
RMS limit
at V
R1
Ultrafast Rectifier,
= Rated V
12
12
8 A FRED Pt
R
TM
200
160
120
50
40
30
20
10
80
40
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
V
T
T
J
J
I
I
I
Fig. 8 - Typical Stored Charge vs. dI
R
F
F
F
= 125 °C
= 25 °C
= 160 V
= 16 A
= 8 A
= 4 A
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
V
T
T
J
J
R
= 125 °C
= 25 °C
= 160 V
Document Number: 93123
Revision: 24-Jun-08
I
I
I
F
F
F
= 16 A
= 8 A
= 4 A
F
/dt
1000
1000
F
/dt