10BQ030 Vishay, 10BQ030 Datasheet - Page 2

DIODE SCHOTTKY 30V 1A DO-214AA

10BQ030

Manufacturer Part Number
10BQ030
Description
DIODE SCHOTTKY 30V 1A DO-214AA
Manufacturer
Vishay
Datasheet

Specifications of 10BQ030

Voltage - Forward (vf) (max) @ If
420mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Rectifiers
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
430 A
Configuration
Single
Forward Voltage Drop
0.47 V at 2 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
*10BQ030
VS-10BQ030
VS-10BQ030
VS10BQ030
VS10BQ030

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Document Number: 94111
10BQ030PbF
Bulletin PD-20783 07/04
Absolute Maximum Ratings
Thermal-Mechanical Specifications
Voltage Ratings
Electrical Specifications
T
T
R
R
wt
(*) dPtot
(**) Mounted 1 inch square PCB
V
V
I
I
E
I
V
V
I
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
S
J
stg
R
RWM
AS
FM
FM
thJL
thJA
T
dTj
Parameters
Parameters
Max. Junction Temperature Range (*) - 55 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Max. Thermal Resistance Junction
to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Junction Capacitance
Typical Series Inductance
(Rated V
Max. Forward Voltage Drop
Max. Forward Voltage Drop
Max. Reverse Leakage Current (1)
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(**)
(1)
(1)
0.10 (0.003) g (oz.)
- 55 to 150
10BQ
10BQ Units
10BQ
10000
0.420
0.470
0.300
0.370
430
200
1.0
3.0
1.0
0.5
5.0
2.0
90
15
25
80
SMB
IR1E
Units
Units
°C/W DC operation
°C/W
V/µs
mA
mA
mA
mJ
nH
°C
°C
pF
A
A
V
V
V
V
Similar DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
@ 1A
@ 2A
@ 1A
@ 2A
T
T
T
V
Measured lead to lead 5mm from package body
J
J
J
J
R
= 25 °C, I
= 25 °C
= 100 °C
= 125 °C
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
AS
Conditions
= 1A, L = 6mH
Conditions
Conditions
T
T
V
10BQ030PbF
J
J
R
L
= 106 °C, rectangular wave form.
= 25 °C
= 125 °C
= rated V
J
max. Va = 1.5 x Vr typical
30
R
Following any rated
load condition and
with rated V
www.vishay.com
RRM
applied
2

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