MBRS130TR Vishay, MBRS130TR Datasheet - Page 2

DIODE SCHOTTKY 30V 1A SMB

MBRS130TR

Manufacturer Part Number
MBRS130TR
Description
DIODE SCHOTTKY 30V 1A SMB
Manufacturer
Vishay
Datasheets

Specifications of MBRS130TR

Voltage - Forward (vf) (max) @ If
420mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
1 A
Max Surge Current
870 A
Configuration
Single
Forward Voltage Drop
0.67 V at 2 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
VS-MBRS130TR
VS-MBRS130TR
VSMBRS130TR
VSMBRS130TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBRS130TR
Manufacturer:
IR
Quantity:
45 000
Part Number:
MBRS130TRPBF
Manufacturer:
IR
Quantity:
45 000
MBRS130TR
Bulletin PD-20584 rev. D 03/03
2
Electrical Specifications
Thermal-Mechanical Specifications
Voltage Ratings
Absolute Maximum Ratings
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
I
C
L
dv/dt Max. Voltage Rate of Change
(**) Mounted 1 inch square PCB
T
T
R
R
wt
V
V
(*) dPtot
I
I
E
I
RM
F(AV)
FSM
AR
S
FM
stg
T
J
thJL
thJA
R
RWM
AS
dTj
Parameters
Max. Forward Voltage Drop
Max. Reverse Leakage Current
Max. Junction Capacitance
Typical Series Inductance
(Rated V
Parameters
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
Max. Thermal Resistance
Junction to Lead
Max. Thermal Resistance
Junction to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
Max. Peak One Cycle Non-Repetitive
Surge Current
Non- Repetitive Avalanche Energy
Repetitive Avalanche Current
<
Rth( j-a)
1
R
)
thermal runaway condition for a diode on its own heatsink
(1)
(**)
0.10 (0.003) g (oz.)
- 55 to 125
- 55 to 150
Value
10000
Value
Value
0.67
0.42
0.52
200
0.6
5.0
2.0
870
(1)
15
3.0
1.0
1.0
25
50
80
SMB
IR13
Units
Units
V/µs
Units Conditions
°C/W DC operation
°C/W DC operation
mA
mA
0.5
nH
pF
mJ
V
V
V
V
°C
°C
A
A
A
@ 1A
@ 2A
@ 1A
@ 2A
mA
T
T
V
Measured lead to lead 5mm from package body
Similar to DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
J
R
J
= 100 °C
= 125 °C
= 25 °C, I
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
AS
Conditions
Conditions
= 1A, L = 6mH
T
T
V
J
J
R
MBRS130TR
= 25 °C
= 125 °C
L
T
= rated V
= 147 °C, rectangular wave form
J
J
=
max. Va = 1.5 x Vr typical
30
25 °C
R
Following any rated
load condition and
with rated V
www.irf.com
RRM
applied

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