MBRS330T3 ON Semiconductor, MBRS330T3 Datasheet
MBRS330T3
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MBRS330T3 Summary of contents
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... MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system ...
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... FSM qJL 125°C J 0.1 0.7 0.8 0.9 1.0 0.0 0 MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) F Figure 2. Maximum Forward Voltage http://onsemi.com 2 MBRS330T3 MBRS340T3 110° 105° − +150 5000 Pulses >400 >8000 11 0.50 2 100° 25° −65° ...
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TYPICAL ELECTRICAL CHARACTERISTICS 1.E−01 1.E− 125°C J 1.E− 100°C J 1.E−04 1.E− 25°C J 1.E− REVERSE VOLTAGE (V) R Figure 3. Typical Reverse Current 5 4.5 dc ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...