MBRS130LT3 ON Semiconductor, MBRS130LT3 Datasheet - Page 2

• Manufacturer Part Number: MBRS130LT3
• Description: DIODE SCHOTTKY 30V 1A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS130LT3

• Voltage - Forward (vf) (max) @ If: 445mV @ 2A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Dc: 0616
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: MBRS130LT3OSCT

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Operating Junction Temperature
Thermal Resistance,
Thermal Resistance,
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
T
T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Junction−to−Lead
Junction−to−Ambient (T
Junction−to−Ambient (T
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
L
L
F
F
= 120°C
= 110°C
= 1.0 A, T
= 2.0 A, T
J
J
= 25°C)
= 25°C)
J
J
= 25°C)
= 100°C)
A
A
= 25°C, Min Pad, 1 oz copper)
= 25°C, 1” Pad, 1 oz copper)
Characteristic
Rating
Rating
http://onsemi.com
2
Symbol
Symbol
Symbol
V
V
I
I
R
F(AV)
Y
FSM
RWM
V
RRM
V
T
I
qJA
R
R
JL
J
F
−65 to +125
Value
Value
Value
228.8
0.395
0.445
71.3
1.0
2.0
1.0
30
40
12
10
°C/W
°C/W
Unit
Unit
Unit
mA
°C
V
A
A
V