MBRS130LT3G ON Semiconductor, MBRS130LT3G Datasheet - Page 2
![DIODE SCHOTTKY 30V 1A SMB](/photos/5/27/52756/do-214aa_smb403a_sml.jpg)
MBRS130LT3G
Manufacturer Part Number
MBRS130LT3G
Description
DIODE SCHOTTKY 30V 1A SMB
Manufacturer
ON Semiconductor
Specifications of MBRS130LT3G
Voltage - Forward (vf) (max) @ If
445mV @ 2A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
1mA @ 30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
2 A
Max Surge Current
40 A
Configuration
Single
Forward Voltage Drop
0.445 V
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Current, Forward
1 A
Current, Reverse
10 mA
Current, Surge
40 A
Package Type
SMB
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.395 V
Voltage, Reverse
30 V
Dc
08+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRS130LT3GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBRS130LT3G
Manufacturer:
ON
Quantity:
7 500
Company:
Part Number:
MBRS130LT3G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
MBRS130LT3G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current
Operating Junction Temperature
Thermal Resistance,
Thermal Resistance,
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
T
T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Junction−to−Lead
Junction−to−Ambient (T
Junction−to−Ambient (T
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
L
L
F
F
= 120°C
= 110°C
= 1.0 A, T
= 2.0 A, T
J
J
= 25°C)
= 25°C)
J
J
= 25°C)
= 100°C)
A
A
= 25°C, Min Pad, 1 oz copper)
= 25°C, 1” Pad, 1 oz copper)
Characteristic
Rating
Rating
http://onsemi.com
2
Symbol
Symbol
Symbol
V
V
I
I
R
F(AV)
Y
FSM
RWM
V
RRM
V
T
I
qJA
R
R
JL
J
F
−65 to +125
Value
Value
Value
228.8
0.395
0.445
71.3
1.0
2.0
1.0
30
40
12
10
°C/W
°C/W
Unit
Unit
Unit
mA
°C
V
A
A
V