MBR120LSFT1G ON Semiconductor, MBR120LSFT1G Datasheet - Page 2

• Manufacturer Part Number: MBR120LSFT1G
• Description: DIODE SCHOTTKY 20V 1A SOD-123FL
• Manufacturer: ON Semiconductor

Specifications of MBR120LSFT1G

• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 400µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123 Flat Leads
• Product: Schottky Diodes
• Peak Reverse Voltage: 20 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.65 V @ 3 A
• Maximum Reverse Leakage Current: 400 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 20V
• Avg. Forward Curr (max): 1A
• Rev Curr: 400uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.65V
• Operating Temp Range: -55C to 125C
• Package Type: SOD-123FL
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR120LSFT1GOSTR

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (At Rated V
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated V
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(I
(I
(I
(V
(V
Working Peak Reverse Voltage
DC Blocking Voltage
(At Rated V
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
F
F
F
R
R
= 0.1 A)
= 1.0 A)
= 3.0 A)
= 20 V)
= 10 V)
R
, Square Wave, 100 kHz, T
R
, T
Rating
Rating
J
= 25°C)
L
= 110°C)
R
, T
2
).
L
= 115°C)
http://onsemi.com
MBR120LSFT1
2
Symbol
Symbol
V
V
dv/dt
I
I
T
R
R
FRM
FSM
RWM
V
R
R
RRM
V
I
T
I
stg
O
R
tja
tja
R
J
tjl
tjl
F
T
T
J
J
0.34
0.45
0.65
0.40
0.10
= 25°C
= 25°C
−55 to 150
−55 to 125
10,000
Value
Value
325
1.0
2.0
20
50
26
21
82
T
T
J
J
0.415
0.26
0.67
= 85°C
= 85°C
25
18
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
V