MUR2100E ON Semiconductor, MUR2100E Datasheet - Page 2

• Manufacturer Part Number: MUR2100E
• Description: DIODE ULTRA FAST 2A 1KV DO-41
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR2100E

• Voltage - Forward (vf) (max) @ If: 2.2V @ 2A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Capacitance @ Vr, F: -

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Maximum Reverse Recovery Time
Maximum Forward Recovery Time
Controlled Avalanche Energy (See Test Circuit in Figure 6)
(I
(I
(Rated dc Voltage, T
(Rated dc Voltage, T
(I
(I
(I
F
F
F
F
F
= 2.0 A, T
= 2.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, I
= 1.0 A, di/dt = 100 A/ms, I
R
J
J
= 1.0 A, I
= 150°C)
= 25°C)
J
J
= 100°C)
= 25°C)
REC
= 0.25 A)
1.0
0.1
Characteristic
10
1.0
0.1
REC
10
0.0
0.0
to 1.0 V)
0.5
Figure 1. Maximum Forward Voltage
0.5
Figure 2. Typical Forward Voltage
V
V
V
F
F
F,
, INSTANTANEOUS VOLTAGE (V)
@ 175°C
INSTANTANEOUS VOLTAGE (V)
http://onsemi.com
1.0
1.0
V
F
MUR2100E
@ 175°C
25°C
1.5
1.5
2
25°C
150°C
2.0
100°C
2.0
100°C
150°C
2.5
2.5
3.0
3.0
Symbol
W
3.5
3.5
V
AVAL
i
t
t
R
rr
fr
F
Value
1.75
2.20
600
100
10
75
75
10
Unit
mJ
mA
ns
ns
V