MBR1100 ON Semiconductor, MBR1100 Datasheet
MBR1100
Manufacturer Part Number
MBR1100
Description
DIODE SCHOTTKY 1A 100V DO-41
Manufacturer
ON Semiconductor
Datasheet
1.MBR1100RLG.pdf
(4 pages)
Specifications of MBR1100
Voltage - Forward (vf) (max) @ If
790mV @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBR1100OS
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MBR1100
Axial Lead Rectifier
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
•
•
•
•
•
•
•
•
•
Mechanical Characteristics:
•
•
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•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 6
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(V
P.C. Board Mounting, [see Note 3], T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating and Storage Junction Temperature
Range (Note 1)
Voltage Rate of Change (Rated V
These rectifiers employ the Schottky Barrier principle in a large area
Leads are Readily Solderable
260°C Max. for 10 Seconds
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
High Surge Capacity
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Polarity: Cathode Indicated by Polarity Band
Junction−to−Ambient: dP
R(equiv)
≤ 0.2 V
R
(dc), R
Rating
qJA
D
/dT
= 50°C/W,
Preferred Device
J
< 1/R
R
)
A
= 120°C)
qJA
.
Symbol
T
V
V
dv/dt
I
J
FSM
RWM
V
RRM
, T
I
O
R
stg
Value
−65 to
+175
100
1.0
50
10
1
V/ns
Unit
°C
V
A
A
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MBR1100
MBR1100G
MBR1100RL
MBR1100RLG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device
(Note: Microdot may be in either location)
1.0 AMPERE, 100 VOLTS
BARRIER RECTIFIER
ORDERING INFORMATION
A
Y
WW = Work Week
G
MARKING DIAGRAM
http://onsemi.com
SCHOTTKY
= Assembly Location
= Year
= Pb−Free Package
Axial Lead*
Axial Lead*
Axial Lead*
Axial Lead*
Package
MBR1100
YYWW G
Publication Order Number:
A
G
AXIAL LEAD
CASE 59
STYLE 1
DO−41
5000/Tape & Reel
5000/Tape & Reel
1000 Units/Bag
1000 Units/Bag
Shipping
MBR1100/D
†
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MBR1100 Summary of contents
Page 1
... Units/Bag MBR1100G Axial Lead* 1000 Units/Bag MBR1100RL Axial Lead* 5000/Tape & Reel MBR1100RLG Axial Lead* 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...
Page 2
... INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage 4.0 3.0 dc 2.0 SQUARE WAVE 1 100 T , AMBIENT TEMPERATURE (°C) A Figure 3. Current Derating (Mounting Method 3 per Note 3) MBR1100 (T = 25°C unless otherwise noted 400 200 100 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.9 1 ...
Page 3
... BOARD GROUND Mounting Method É É É É É É É É É É É É É É É É MBR1100 NOTE 4 — THERMAL CIRCUIT MODEL: R qS(A) T A(A) Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For ...
Page 4
... MAX MIN MAX 0.205 4.10 5.20 0.106 2.00 2.70 0.034 0.71 0.86 0.050 −−− 1.27 −−− 25.40 −−− ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR1100/D ...