MBR160 ON Semiconductor, MBR160 Datasheet - Page 3
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MBR160
Manufacturer Part Number
MBR160
Description
DIODE SCHOTTKY 1A 60V DO-41
Manufacturer
ON Semiconductor
Datasheet
1.MBR160RLG.pdf
(5 pages)
Specifications of MBR160
Voltage - Forward (vf) (max) @ If
750mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
MBR160OS
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NOTE 1. — MOUNTING DATA:
(R
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient
qJA)
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
for the mounting shown is to be used as a typical
0
1
2
3
0.1
Figure 5. Steady−State Thermal Resistance
Typical Values for R
1/8
0.2
1/4
BOTH LEADS TO HEATSINK,
1/8
52
67
—
L, LEAD LENGTH (INCHES)
Lead Length, L (in)
0.5
EQUAL LENGTH
MAXIMUM
3/8
1/4
65
80
1.0
1/2
qJA
1/2
72
87
50
in Still Air
2.0
TYPICAL
5/8
100
THERMAL CHARACTERISTICS
3/4
85
3/4
5.0
Figure 4. Thermal Response
MBR150, MBR160
°C/W
°C/W
°C/W
R
http://onsemi.com
7/8
qJA
10
t, TIME (ms)
1.0
20
3
.
200
100
80
70
60
50
40
30
20
0
50
T
R
A(A)
qS(A)
DT
DT
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
transient thermal resistance at time, t
NOTE 2. — THERMAL CIRCUIT MODEL:
10
(For heat conduction through the leads)
JL
JL
t
T
Z
p
100
L(A)
qJL(t)
= P
= the increase in junction temperature above the lead
pk
R
20
Figure 6. Typical Capacitance
qL(A)
= Z
• R
t
1
200
V
qJL
P
qJL
R
pk
30
T
, REVERSE VOLTAGE (VOLTS)
C(A)
• r(t)
[D + (1 − D) • r(t
R
qJ(A)
40
T
P
500
J
pk
TIME
50
P
R
)
D
1
q J(K
1
1 k
1
+ t
DUTY CYCLE, D = t
PEAK POWER, P
of an equivalent square
power pulse.
+ t
60
+ t
p
p
) + r(t
p
T
) = normalized value of
.
C(K)
T
f = 1 MHz
70
2 k
p
J
R
) − r(t
= 25°C
qL(K)
80
1
)] where
T
L(K)
pk
, is peak
p
5 k
R
/t
90
T
1
qS(K)
A(K)
10 k
100