MURHS160T3G ON Semiconductor, MURHS160T3G Datasheet - Page 2

• Manufacturer Part Number: MURHS160T3G
• Description: DIODE ULT FAST 1A 600V SMB
• Manufacturer: ON Semiconductor
• Series: MEGAHERTZ™r

Specifications of MURHS160T3G

• Voltage - Forward (vf) (max) @ If: 2.4V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Maximum Thermal Resistance, Junction−to−Lead (Note 1)
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Maximum Instantaneous Forward Voltage (Note 3)
(I
(I
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
(Rated dc Voltage, T
Maximum Reverse Recovery Time
(I
(I
F
F
F
F
= 1.0 A, T
= 1.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, I
R
C
C
= 1.0 A, I
= 25°C)
= 125°C)
C
C
= 25°C)
= 125°C)
REC
= 0.25 A)
Rating
Rating
http://onsemi.com
2
Symbol
Symbol
R
R
V
I
t
qJA
qJL
R
rr
F
0.18
Typ
1.5
1.2
5.0
25
16
Value
24
80
Max
200
2.4
1.7
20
35
30
°C/W
°C/W
Unit
Unit
mA
ns
V