MURS360BT3G ON Semiconductor, MURS360BT3G Datasheet - Page 3

• Manufacturer Part Number: MURS360BT3G
• Description: DIODE ULT FAST 3A 600V SMB
• Manufacturer: ON Semiconductor

Specifications of MURS360BT3G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

70
60
50
40
30
20
10
0
3
2
1
0
0
0
dc
dc
Square Wave
Figure 7. Current Derating, Ambient
25
20
T
Figure 5. Typical Capacitance
A
, AMBIENT TEMPERATURE (°C)
V
r
, REVERSE VOLTAGE (V)
50
40
75
4
3
2
1
0
0
60
R
R
No Heatsink
100
qJA
qJA
T
I
T
f = 1 MHz
J
F(AV)
Figure 9. Maximum Forward Power
J
= 150°C
TYPICAL CHARACTERISTICS
= 71°C/W
= 120°C/W
= 25°C
, AVERAGE FORWARD CURRENT (A)
80
1
125
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MURS360BT3
Dissipation
100
150
3
2
Square Wave
5
4
3
2
1
0
4
3
2
1
0
65
0
Figure 8. Typical Forward Power Dissipation
Square
3
75
T
I
J
F(AV)
dc
= 150°C
dc
Figure 6. Current Derating, Lead
, AVERAGE FORWARD CURRENT (A)
85
T
C
1
, CASE TEMPERATURE (°C)
95
4
105
2
115
Square Wave
125
3
135
145
dc
155
4